Sales of Advanced SiC Refractories

Advanced SiC Refractories1Advanced SiC Refractories2
Advanced SiC Refractories3

Reaction-bonded Silicon Carbide (Si-SiC)

This is reaction-bonded (silicon infiltraded) silicon carbide, being formed zero porosity by filling up open porosity with silicon metal (Si). Because of it's zero porosity characteristic, thermal conductivity is more than twice of Oxide Bonded SiC's, bending strength is more than 5 times higher comparing to Oxide Bonded SiC.

Si-SiC's sepecial feature is its ability to maintain high strength from room temperature up to 1,350°C. Also it has very high oxidation resistance, chemical resistance and wear resistance. Used as beam, roller, radiant tube burner and burner nozzle etc.

Recrystallized Silicon Carbide (Re-SiC)

It's unique characteristic enables the use of maximum temperature up to 1,600°C, higher than the other SiC refractories.

Re-SiC, produced by sintering fine SiC grain itself at very high temperature, has very high purity, 99% SiC composition. Suitable to apply firing raw materials or products which need to avoid contaminations. Used as sagger and plate etc.

Nitride Bonded Silicon Carbide (N-SiC)

Maximum service temperature is 1,450°C, and especially suitable at the long time firing beween 1,200~1,450°C range. N-SiC is made by SiC bonded by Silicon Nitride (Si3N4) chemically stable, suitable to apply firing products need to avoid oxidation reaction.

It is a class higher SiC refractory compare to Oxide Bonded SiC, in terms of oxidation resistance, thermal shock resistance and strength. Used as plate, beam and for refractory for molten aluminum etc.

Technical Parameter

Max. service temperature Reaction-bonded
Si-SiC
Recrystallized
Re-SiC
Nitride Bonded
N-SiC
Oxide Bonded
SiC (FR-90)
(°C) 1350 1600 1450 1500
Chemical Composition (%) Reaction-bonded
Si-SiC
Recrystallized
Re-SiC
Nitride Bonded
N-SiC
Oxide Bonded
SiC (FR-90)
SiC 90 99 68 89.5
Si 10      
Si3N4     25  
SiO2       8.9
Properties Reaction-bonded
Si-SiC
Recrystallized
Re-SiC
Nitride Bonded
N-SiC
Oxide Bonded
SiC (FR-90)
Apparent Porosity (%) <0.1 15 <1 6.5
Bulk Density (g/cm3) >3.02 2.7 2.8 2.8
Properties Reaction-bonded
Si-SiC
Recrystallized
Re-SiC
Nitride Bonded
N-SiC
Oxide Bonded
SiC (FR-90)
Modulus of Rupture
at RT (Mpa)
250 90 160 45
1200°C 250      
1400°C   100 180  
Properties Reaction-bonded
Si-SiC
Recrystallized
Re-SiC
Nitride Bonded
N-SiC
Oxide Bonded
SiC (FR-90)
Thermal Expansion
at 1000°C (10-6K-1)
4.5 4.8 4.5 4.8
Thermal Conductivity
at 1000°C (W / mK)
40 25 20 16

* Depending on operating condition, actual figures may vary.